Micron Technology DRAM SDRAM-DDR4, Part #: MT40A512M8SA-062E AAT:F | Dynamic random access memory | DEX Level 3 Voltage - Supply: 1

Voltage - Supply: 1

Fast Intrinsic Rectifier

MAX:SP3222EBEY-L/TR

Dedicated Copy

Micron Technology DRAM SDRAM-DDR4, Part #: MT40A512M8SA-062E AAT:F | Dynamic random access memory | DEX Level 3 Voltage - Supply: 1Micron Technology DRAM SDRAM DDR4, Part #: MT40A512M8SA 062E AAT: F features: VDD = VDDQ = 1. 2V 60mV VPP = 2. 5V 125mV +250mV On die, internal, adjustable VREFDQ generation 1. 2V pseudo open drain I O Refresh maximum interval time at TC temperature range: 64ms at 40C to 85C 32ms at 85C to 95C 16ms at 96C to 105C 8ms at 106C to 125C 16 internal banks ( x8): 4 groups of 4 banks each 8 internal banks (x16): 2 groups of 4 banks each 8n bit prefetch