Micron Technology DRAM SDRAM, Part #: MT41K256M16TW-107 AAT:P TR | Dynamic random access memory | DEX integrated circuits OPA2180QDGKRQ1

OPA2180QDGKRQ1

Internal Switch(s): Yes

wide supply range performance operational amplifier that can be designed into a wide range of applications at an economical price without sacrificing valuable board space

Murata Electronics Chip Multilayer Ceramic Capacitor

Micron Technology DRAM SDRAM, Part #: MT41K256M16TW-107 AAT:P TR | Dynamic random access memory | DEX integrated circuits OPA2180QDGKRQ1Micron Technology DRAM SDRAM DDR3L, Part #: MT41K256M16TW 107 AAT: P TR is a low voltage version of the DDR3 (1. 5V) SDRAM. Features: VDD = VDDQ = 1. 35V (1. 2831. 45V) Backward compatible to VDD = VDDQ = 1. 5V 0. 075V Supports DDR3L devices to be backward compatible in 1. 5V applications Differential bidirectional data strobe 8n bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on die termination (ODT)